دیتاشیت SMSD602-RT1G
مشخصات دیتاشیت
| نام دیتاشیت |
SMSD602-RT1G
|
| حجم فایل |
72.679
کیلوبایت
|
| نوع فایل |
pdf
|
| تعداد صفحات |
5
|
مشخصات
-
RoHS:
true
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Category:
Triode/MOS Tube/Transistor/Bipolar Transistors - BJT
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Datasheet:
onsemi SMSD602-RT1G
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Transistor Type:
NPN
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Operating Temperature:
+150°C@(Tj)
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Collector Current (Ic):
500mA
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Power Dissipation (Pd):
200mW
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Transition Frequency (fT):
-
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DC Current Gain (hFE@Ic,Vce):
120@150mA,10V
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Collector Cut-Off Current (Icbo):
100nA
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Collector-Emitter Breakdown Voltage (Vceo):
50V
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Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib):
600mV@300mA,30mA
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Package:
SC-59
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Manufacturer:
onsemi
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Series:
-
-
Packaging:
Tape & Reel (TR)
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Part Status:
Active
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Current - Collector (Ic) (Max):
500mA
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Voltage - Collector Emitter Breakdown (Max):
50V
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Vce Saturation (Max) @ Ib, Ic:
600mV @ 30mA, 300mA
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Current - Collector Cutoff (Max):
100nA (ICBO)
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DC Current Gain (hFE) (Min) @ Ic, Vce:
120 @ 150mA, 10V
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Power - Max:
200mW
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Frequency - Transition:
-
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Mounting Type:
Surface Mount
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Package / Case:
TO-236-3, SC-59, SOT-23-3
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Supplier Device Package:
SC-59-3
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Base Part Number:
SMSD6
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detail:
Bipolar (BJT) Transistor NPN 50V 500mA 200mW Surface Mount SC-59-3
